2SK3135 Datasheet, PDF (2/10 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK3135(L),2SK3135(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
V_DSS
V_GSS
I_D
I ^{Note 1}
D(pulse)
I _DR
I ^{Note 3}
AP
E Note 3
AR
Pch ^{Note 2}
Channel temperature
Tch
Storage temperature
Tstg
Note:
1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Ratings
Unit
60
V
±20
V
75
A
300
A
75
A
50
A
214
mJ
100
W
150
°C
–55 to +150
°C
2