2SK3135 Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK3135(L),2SK3135(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 6 mΩ typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
ADE-208-695B (Z)
3rd. Edition
February 1999
LDPAK
2
1
3
4
4
1
2
3
1
2
3
1. Gate
2. Drain
3. Source
4. Drain