2SK2851 Datasheet, PDF (2/10 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK2851
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
V_DSS
V_GSS
I_D
I *¹
D(pulse)
I _DR
I _AP * ³
E_AR* ³
Pch*²
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Ta = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Ratings
Unit
60
V
±20
V
5
A
20
A
5
A
5
A
2.14
mJ
0.9
W
150
°C
–55 to +150
°C
2