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| 2SK2851 Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching | |||
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2SK2851
Silicon N Channel MOS FET
High Speed Power Switching
Features
⢠Low on-resistance
RDS(on) = 0.055⦠typ. (at VGS = 10 V, ID = 2.5 A)
⢠4V gate drive devices.
⢠Large current capacitance
ID = 5 A
Outline
TO-92MOD.
ADE-208-478
1st. Edition
D
G
S
32 1
1. Source
2. Drain
3. Gate
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