HM5112805F-6 Datasheet, PDF (1/34 Pages) Hitachi Semiconductor – 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh

HM5112805F-6, HM5113805F-6
128M EDO DRAM (16-Mword × 8-bit)
8k refresh/4k refresh
ADE-203-1050C (Z)
Rev. 3.0
Feb. 2, 2000
Description
The Hitachi HM5112805F, HM5113805F are 128M-bit dynamic RAMs organized as 16,777,216-word ×
8-bit. They have realized high performance and low power by employing CMOS process technology.
HM5112805F, HM5113805F offer Extended Data Out (EDO) Page Mode as a high speed access mode.
They are packaged in 32-pin plastic TSOPII.
Features
• Single 3.3 V supply: 3.3 V ± 0.3 V
• Access time: 60 ns (max)
• Power dissipation
 Active: 720 mW (max) (HM5112805F)
792 mW (max) (HM5113805F)
 Standby : 3.6 mW (max) (CMOS interface)
: 1.8 mW (max) (CMOS interface) (L-version)
• EDO page mode capability
• Refresh cycles
 RAS-only refresh
8192 cycles/64 ms (HM5112805F)
4096 cycles/64 ms (HM5113805F)
 CBR/Hidden refresh
4096 cycles/64 ms (HM5112805F, HM5113805F)