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| HD2305 Datasheet, PDF (3/5 Pages) Jiangsu High diode Semiconductor Co., Ltd – SOT-23 Plastic-Encapsu l ate MOSFET | |||
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Typical Characteristics
Output Characteristics
-16
-12
VGS= -4.5Vã -4Vã -3.5Vã-3Vã-2.5V
VGS=-2V
-8
VGS=-1.5V
-4
-0
-0
-1
-2
-3
-4
DRAIN TO SOURCE VOLTAGE VDS (V)
-5
VDS=-3V
-4
Transfer Characteristics
-3
-2
Ta=100â
Ta=25â
Pulsed
Pulsed
-1
-0
-0.0
-0.5
-1.0
-1.5
-2.0
GATE TO SOURCE VOLTAGE VGS (V)
180
Ta=25â
Pulsed
120
60
RDS(ON) ââ ID
VGS=-1.8V
VGS=-2.5V
VGS=-4.5V
0
-0
-2
-4
-6
-8
-10
-12
DRAIN CURRENT ID (A)
RDS(ON) ââ VGS
200
150
100
50
0
-0
ID=-3.3A
Ta=100â
Pulsed
Ta=25â
Pulsed
-2
-4
-6
GATE TO SOURCE VOLTAGE VGS (V)
IS ââ VSD
-10
Threshold Voltage
-1.0
-1
Ta=100â
Pulsed
Ta=25â
Pulsed
-0.8
ID=-250uA
-0.6
-0.4
-0.2
-0.1
-0.4
-0.8
-1.2
-1.6
-2.0
SOURCE TO DRAIN VOLTAGE VSD (V)
-0.0
25
50
75
100
AMBIENT TEMPERATURE Ta (â)
High Diode Semiconductor
125
3
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