HD2305 Datasheet, PDF (2/5 Pages) Jiangsu High diode Semiconductor Co., Ltd – SOT-23 Plastic-Encapsu l ate MOSFET

Electrical Characteristics (T_A=25℃ unless otherwise noted)
Parameter
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
Drain-source on-state resistanc^ae
Forward transconductance^a
Dynamic
Input capacitance^b,c
Output capacitance^b,c
Reverse transfer capacitance^b,c
Total gate charge^b
Symbol
Test Condition
V(BR)DSS
VGS(th)
I_GSS
I_DSS
RDS(on)
gfs
VGS = 0V, ID =-250µA
VDS =V_GS, ID =-250µA
VDS =0V, VGS =±8V
VDS =-8V, VGS =0V
VGS =-4.5V, ID =-3.5A
VGS =-2.5V, ID =-3A
VGS =-1.8V,ID=-2.0A
VDS =-5V, ID =-4.1A
C_iss
C_oss
VDS =-4V,VGS =0V,f =1MHz
C_rss
VDS =-4V,VGS =-4.5V,
Q_g
ID =-4.1A
Gate-source charge^b
Gate-drain charge^b
Gate resistance^b,c
Turn-on delay time^b,c
Rise time^b,c
Turn-off Delay time^b,c
Fall time^b,c
Turn-on delay time^b,c
Rise time^b,c
Turn-off delay time^b,c
Fall time^b,c
Q_gs
Q_gd
R_g
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VDS =-4V,VGS =-2.5V,
ID =-4.1A
f =1MHz
V_DD=-4V,
R_L=1.2Ω, ID ≈-3.3A,
V_GEN=-4.5V,Rg=1Ω
V_DD=-4V,
R_L=1.2Ω, ID ≈-3.3A,
V_GEN=-8V,Rg=1Ω
Drain-source body diode characteristics
Continuous source-drain diode current
I_S
Pulse diode forward current^a
I_SM
Body ciode voltage
V_SD
T_C=25℃
I_F=-3.3A
Note :
a. Pulse Test ; Pulse Width ≤300µs, Duty Cycle ≤2%.
b. Guaranteed by design, not subject to production testing.
c. These parameters have no way to verify.
Min Typ Max Units
-12
V
-0.5
-0.9
±100 nA
-1
µA
30
45
40
60 mΩ
60
90
6
S
740
290
pF
190
7.8
15
4.5
9
nC
1.2
1.6
1.4
7
14
Ω
13
20
35
53
32
48
10
20
ns
5
10
11
17
22
33
16
24
-1.4
A
-10
-1.2
V
High Diode Semiconductor
2