US1A-SMAK Datasheet, PDF (2/4 Pages) Jiangsu High diode Semiconductor Co., Ltd – SMAK Plastic-Encapsulate Diodes

Typical Characteristics
FIG.1: FORWARD CURRENT DERATING CURVE
1.0
0.8
0.6
0.4
0.2
Resistive or Inductive Load
P.C.B. Mounted on 0.2"×0.2"
(5.0mm×5.0mm)Copper Pad Areas
0
0
25
50
75
100
125
150
TL(℃)
FIG.3: TYPICAL FORWARD CHARACTERISTICS
100
TJ=25℃
Pulse width=300us
1% Duty Cycle
10
US1A-D
FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT
35
30
8.3ms Single Half Sine Wave
JEDEC Method
25
20
15
10
5
01
2
10
20
100
Number of Cycles
FIG.4：TYPICAL REVERSE CHARACTERISTICS
100
Tj=150℃
10
1.0
US1G
1.0
US1J-M
0.1
0.1
Tj=100℃
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VF(V)
0.01
0
20
40
FIG.5: Diagram of circuit and Testing wave form of reverse recovery time
I
D
trr
IF
VR
IF
RL
0
Tj=25℃
60
80
100
Voltage(%)
t
IRR
IR
High Diode Semiconductor
2