US1A-SMAK Datasheet, PDF (1/4 Pages) Jiangsu High diode Semiconductor Co., Ltd – SMAK Plastic-Encapsulate Diodes

US1A THRU US1M
SMAK Plastic-Encapsulate Diodes
High Efficient Rectifier
Features
●Io
1A
●VRRM
50V-1000V
●High surge current capability
●Glass passivated chip
●Polarity: Color band denotes cathode
Applications
● Rectifier
Marking
● US1X
X ^: From A To M
SMAK
HD AK 50
Item
Symbol Unit
Repetitive Peak Reverse Voltage _VRRM
V
Maximum RMS Voltage
V_RMS
V
Conditions
US
1A 1B 1D 1F 1G 1J 1K 1M
50 100 200 300 400 600 800 1000
35 70 140 210 280 420 560 700
Average Forward Current
Surge(Non-repetitive)Forward
Current
Junction Temperature
Storage Temperature
I_F(AV)
I_FSM
T_J
T_STG
A 60Hz Half-sine wave, Resistance
load, TL=115℃
A
60Hz Half-sine wave,1 cycle,
Ta=25℃
℃
℃
1.0
30
-55 ~ +150
-55 ~ +150
Electrical Characteristics (Ta=25℃ Unless otherwise specified)
Item
Symbol Unit
Test Condition
US
11AA 11BB 11DD 11FF 1G 1J 1K 1M
Peak Forward Voltage
V_FM
V
I_FM=1.0A
1.0
1.3
1.7
Peak Reverse Current
I_RRM1
I_RRM2
μA
Reverse Recovery time
trr
ns
V_RM=V_RRM
Ta=25℃
Ta=125℃
I_F=0.5A I_R=1A
I_RR=0.25A
5
50
50
75
Thermal
Resistance(Typical)
R_θJ-A
R_θJ-L
℃/W
Between junction and ambient
Between junction and terminal
75¹⁾
27¹⁾
Notes:
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper
pad areas
High Diode Semiconductor
1