US1A-28J Datasheet, PDF (2/4 Pages) Jiangsu High diode Semiconductor Co., Ltd – SMAJ Plastic-Encapsulate Diodes

Typical Characteristics
FIG.1: FORWARD CURRENT DERATING CURVE
1.0
0.8
0.6
0.4
0.2 Single Phase Half Wave 60HZ Resistive or
Inductive Load 0.375''(9.5mm) Lead Length
00
50
100
150
FIG.2:MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
50
40
8.3ms Single Half Sine Wave
JEDEC Method
30
20
10
1
2
10
20
100
Number of Cycles
20
10
4.0
2.0
1.0
0.4
0.2
0.1
0.02
0.01
0.4
FIG.3: TYPICAL FORWARD CHARACTERISTICS
US1A-US1D US1F-US1G
US1J-US1M
TJ=25℃
Pulse width=300us
1% Duty Cycle
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VF(V)
1000
FIG.4:TYPICAL REVERSE CHARACTERISTICS
100
10
1.0
0.1
0.01
0
Tj=125℃
Tj=100℃
Tj=25℃
20
40
60
80
100
Voltage(%)
50Ω
(+)
(-)
FIG.5: Diagram of circuit and Testing wave form of reverse recovery time
10Ω
+0.5
(-)
-0.25
1Ω
(+)
=7
=10
.
=1 Ω 22
Ω
-1.0
/
High Diode Semiconductor
2