US1A-28J Datasheet, PDF (1/4 Pages) Jiangsu High diode Semiconductor Co., Ltd – SMAJ Plastic-Encapsulate Diodes

US1A THRU US1M
SMAJ Plastic-Encapsulate Diodes
High Efficient Rectifier
Features
●Io
1A
●VRRM
50V-1000V
●High surge current capability
●Polarity: Color band denotes cathode
SMAJ
Applications
● Rectifier
Marking
● US1X
X ^: From A To M
HD AJ 42
Item
Symbol Unit
Conditions
US
1A 1B 1D 1G 1J 1K 1M
Repetitive Peak Reverse Voltage VRRM
V
Maximum RMS Voltage
V_RMS
V
50 100 200 400 600 800 1000
35 70 140 280 420 560 700
Average Forward Current
I_F(AV)
A
60Hz Half-sine wave, Resistance
load, Ta=75℃
1.0
Surge(Non-repetitive)Forward
Current
Junction Temperature
Storage Temperature
I_FSM
T_J
T_STG
A
60Hz Half-sine wave,1 cycle,
Ta=25℃
℃
℃
30
-55~+125
-55 ~ +150
Electrical Characteristics (Ta=25℃ Unless otherwise specified)
Item
Symbol Unit
Peak Forward Voltage
Peak Reverse Current
Reverse Recovery time
Thermal
Resistance(Typical)
V_FM
I_RRM1
I_RRM2
trr
R_θJ-A
R_θJ-L
V
μA
ns
℃/W
Test Condition
I_FM=1.0A
V_RM=V_RRM
Ta=25℃
Ta=125℃
I_F=0.5A I_R=1A
I_RR=0.25A
Between junction and ambient
Between junction and lead
1A 1B
1.0
US
1D 1F1G 1J
1.3
5
50
50
55
25
1K 1M
1.7
75
Notes:
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper
pad areas
High Diode Semiconductor
1