SS8550--SOT-323 Datasheet, PDF (2/4 Pages) Jiangsu High diode Semiconductor Co., Ltd – SOT-323 Plastic-Encapsulate Transistors

Typical Characteristics
-0.40
-0.35
-0.30
-0.25
-0.20
-0.15
-0.10
-0.05
-0.00
-0.0
-1000
Static Characteristic
-2mA
-1.8mA
-1.6mA
COMMON
EMITTER
Ta=25℃
-1.4mA
-1.2mA
-1mA
-800uA
-600uA
-400uA
I_B=-200uA
-0.5
-1.0
-1.5
-2.0
COLLECTOR-EMITTER VOLTAGE V_CE (V)
V
—— I
CEsat
C
-100
Ta=100℃
Ta=25℃
-10
1000
100
10
-1
-2000
-1000
-300
h —— I
FE
C
Ta=100℃
Ta=25℃
-10
-100
COLLECTOR CURRENT I_C (mA)
V
—— I
BEsat
C
V_CE=-1V
-1000 -1500
Ta=25℃
Ta=100℃
-1
-1
-1500
-1000
-10
-100
COLLECTOR CURRENT I_C (mA)
V
BE
——
I
C
β=10
-1000 -1500
Ta=100℃
-100
Ta=25℃
-10
-1
-200
1000
V_CE=-1V
-400
-600
-800
-1000
-1200
BASE-EMMITER VOLTAGE V_BE (mV)
f —— I
T
C
-100
-1
100
10
1
-0.1
250
-10
-100
COLLECTOR CURRENT I_C (mA)
C / C —— V / V
ob ib
CB EB
Cib
Cob
β=10
-1000 -1500
-1
REVERSE VOLTAGE V (V)
P —— T
C
a
f=1MHz
I_E=0/I_C=0
Ta=25℃
-10
-20
200
150
100
100
V_CE=-10V
Ta=25℃
10
-1
-10
-100
COLLECTOR CURRENT I_C (mA)
50
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE T_a (℃)
High Diode Semiconductor
2