SS8550--SOT-323 Datasheet, PDF (1/4 Pages) Jiangsu High diode Semiconductor Co., Ltd – SOT-323 Plastic-Encapsulate Transistors

SS8550
SOT-323 Plastic-Encapsulate Transistors
TRANSISTOR( P NP )
Features
● _{High Collector Current}
● Complementary to SS8050
SOT- 3 23
Marking:
● Y2
Symbol
V_CBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Value
Collector-Base Voltage
-40
Collector-Emitter Voltage
-25
Emitter-Base Voltage
-5
Collector Current
-1.5
Collector Power Dissipation
200
Thermal Resistance From Junction To Ambient
625
Junction Temperature
150
Storage Temperature
-55～+150
Unit
V
V
V
A
mW
℃/W
℃
℃
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VBE
fT
Cob
Test conditions
IC=-100µA, IE=0
IC=-0.1mA, IB=0
IE=-100µA, IC=0
VCB=-40V, IE=0
VCE=-20V, IB=0
VEB=-5V, IC=0
VCE=-1V, IC=-100mA
VCE=-1V, IC=-800mA
IC=-800mA, IB=-80mA
IC=-800mA, IB=-80mA
VCE=-1V, IC=-10mA
VCE=-10V,IC=-50mA , f=30MHz
VCB=-10V, IE=0, f=1MHz
C
E
B
B
E
Min
Typ
Max Unit
-40
V
-25
V
-5
V
-100
nA
-100
nA
-100
nA
120
400
40
-0.5
V
-1.2
V
-1
V
100
MHz
20
pF
CLASSIFICATION OF h_FE
Rank
L
Range
120-200
H
200-350
J
300-400
High Diode Semiconductor
1