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| S9014-SOT-23 Datasheet, PDF (2/4 Pages) Jiangsu High diode Semiconductor Co., Ltd – SOT-23 Plastic-Encapsulate Transistors | |||
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Typical Characteristics
Static Characteristic
8
20uA
COMMON
EMITTER
Ta=25â
6
18uA
16uA
14uA
4
12uA
10uA
8uA
2
6uA
4uA
IB=2uA
0
0
2
4
6
8
COLLECTOR-EMITTER VOLTAGE VCE (V)
V
ââ I
CEsat
C
1
0.1
0.01
0.1
100
Ta=100â
Ta=25â
1
10
COLLECTOR CURRENT IC (mA)
I ââ V
C
BE
β=20
100
1000
100
10
0.1
2
1
0.1
0.1
1000
h ââ I
FE
C
T =100â
a
Ta=25â
COMMON EMITTER
VCE= 5V
1
10
100
COLLECTOR CURRENT IC (mA)
V
BEsat
ââ
I
C
Ta=25â
Ta=100â
1
10
COLLECTOR CURRENT IC (mA)
f ââ I
T
C
β=20
100
10
1
0.1
0.0
100
10
1
0.1
0.1
Ta=100â
100
Ta=25â
COMMON EMITTER
VCE= 5V
0.3
0.6
0.9
1.2
BASE-EMMITER VOLTAGE VBE (V)
C / C ââ V / V
ob ib
CB EB
f=1MHz
IE=0/IC=0
Ta=25 â
Cib
Cob
10
1
0.1
250
200
150
100
COMMON EMITTER
VCE=5V
Ta=25â
1
10
100
COLLECTOR CURRENT IC (mA)
P ââ T
C
a
50
1
REVERSE VOLTAGE VR (V)
10
20
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta (â)
High Diode Semiconductor
2
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