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| S9014-SOT-23 Datasheet, PDF (1/4 Pages) Jiangsu High diode Semiconductor Co., Ltd – SOT-23 Plastic-Encapsulate Transistors | |||
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S9 014
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( NP N )
Features
â Complementary to S9015
SOT- 23
Marking:
â J6
Symbol
VCBO
VCEO
VEBO
IC
PC
RÎJA
Tj
Tstg
Parameter
Value
Collector-Base Voltage
50
Collector-Emitter Voltage
45
Emitter-Base Voltage
5
Collector Current
100
Collector Power Dissipation
200
Thermal Resistance From Junction To Ambient
625
Junction Temperature
150
Storage Temperature
-55ï½+150
Unit
V
V
V
mA
mW
â/W
â
â
C
B
E
Electrical Characteristics (Ta=25â Unless otherwise specifiedï¼
Parameter
Symbol Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO IC= 100μA, IE=0
50
Collector-emitter breakdown voltage
V(BR)CEO IC= 0.1mA, IB=0
45
Emitter-base breakdown voltage
V(BR)EBO IE=100μA, IC=0
5
Collector cut-off current
ICBO
VCB=50 V , IE=0
Collector cut-off current
ICEO
VCE=35V , IB=0
Emitter cut-off current
IEBO
VEB= 3V , IC=0
DC current gain
hFE
VCE=5V, IC= 1mA
200
Collector-emitter saturation voltage
VCE(sat)
IC=100 mA, IB= 5mA
Base-emitter saturation voltage
Transition frequency
VBE(sat)
IC=100 mA, IB= 5mA
fT
VCE=5V, IC= 10mA
f=30MHz
150
Typ
Max Unit
V
V
V
0.1
μA
1
μA
0.1
μA
1000
0.3
V
1
V
MHz
CLASSIFICATION OF hFE
Rank
Range
L
200-450
H
450-1000
High Diode Semiconductor
1
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