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| S9013-TO-92 Datasheet, PDF (2/4 Pages) Jiangsu High diode Semiconductor Co., Ltd – TO-92 Plastic-Encapsulate Transistors | |||
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Typical Characteristics
100
80
60
40
20
0
0
500
300
Static Characteristic
480uA
420uA
360uA
COMMON
EMITTER
Ta=25â
300uA
240uA
180uA
120uA
IB=60uA
4
8
12
16
20
COLLECTOR-EMITTER VOLTAGE VCE (V)
V
ââ I
CEsat
C
100
Ta=100â
30
Ta=25â
10
1
3
10
30
100
COLLECTOR CURRENT IC (mA)
I ââ V
100
C
BE
COMMON EMITTER
VCE=1V
30
10
Ta=100â
3
1
Ta=25â
β=10
500
0.3
0.1
0.0
100
30
0.2
0.4
0.6
0.8
1.0
BASE-EMMITER VOLTAGE VBE (V)
C /C
ob ib
ââ
V /V
CB EB
Cib
f=1MHz
IE=0/ IC=0
Ta=25â
10
Cob
3
1
0.1
0.3
1
3
10
20
REVERSE VOLTAGE V (V)
1000
100
h ââ I
FE
C
COMMON EMITTER
VCE=1V
Ta=100â
Ta=25â
10
1
3
10
30
100
500
COLLECTOR CURRENT IC (mA)
2000
V
ââ I
BEsat
C
1000
Ta=25â
Ta=100â
100
1
1000
300
100
3
10
30
100
COLLECTOR CURRENT IC (mA)
f ââ I
T
C
β=10
500
VCE=6V
Ta=25â
10
2
700
600
500
400
300
200
100
0
0
10
30
100
COLLECTOR CURRENT IC (mA)
P ââ T
C
a
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta (â)
High Diode Semiconductor
2
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