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| S9013-TO-92 Datasheet, PDF (1/4 Pages) Jiangsu High diode Semiconductor Co., Ltd – TO-92 Plastic-Encapsulate Transistors | |||
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S9 013
TO-92 Plastic-Encapsulate Transistors
TRANSISTOR( NP N )
Features
â Complementary to S9012
â Excellent hFE linearity
TO- 9 2
Symbol
VCBO
VCEO
VEBO
IC
PC
RÎJA
Tj
Tstg
Parameter
Value
Collector-Base Voltage
40
Collector-Emitter Voltage
25
Emitter-Base Voltage
5
Collector Current
500
Collector Power Dissipation
625
Thermal Resistance From Junction To Ambient
416
Junction Temperature
150
Storage Temperature
-55ï½+150
Unit
V
V
V
mA
mW
â/W
â
â
Electrical Characteristics (T=25â Unless otherwise specifiedï¼
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO
IC= 100μA , IE=0
Collector-emitter breakdown voltage
V(BR)CEO
IC= 1mA , IB=0
Emitter-base breakdown voltage
V(BR)EBO
IE= 100μA , IC=0
Collector cut-off current
ICBO
VCB= 40V , IE=0
Collector cut-off current
ICEO
VCE=20V , IE=0
Emitter cut-off current
IEBO
VEB= 5V, IC=0
DC current gain
hFE(1)
hFE(2)
VCE=1V, IC=50mA
VCE=1V, IC= 500mA
Collector-emitter saturation voltage
VCE(sat)
IC= 500mA, IB= 50mA
Base-emitter voltage
VBE(sat)
IC= 500mA, IB= 50mA
E BC
Min Typ Max Unit
40
V
25
V
5
V
0.1
μA
0.1
μA
0.1
μA
64
400
40
0.6
V
1.2
V
Transition frequency
fT
VCE=6V,IC=20mA,f=30MHz
150
MHz
CLASSIFICATION OF hFE
Rank
D
E
Range
64-91
78-112
F
96-135
G
112-166
H
144-202
I
190-300
J
300-400
High Diode Semiconductor
1
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