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| S9013-SOT-23 Datasheet, PDF (2/4 Pages) Jiangsu High diode Semiconductor Co., Ltd – SOT-23 Plastic-Encapsulate Transistors | |||
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Typical Characteristics
100
80
60
40
20
0
0
500
300
Static Characteristic
400uA
350uA
300uA
COMMON
EMITTER
Ta=25â
250uA
200uA
150uA
100uA
4
8
12
16
COLLECTOR-EMITTER VOLTAGE VCE (V)
IB=50uA
20
V
ââ I
CEsat
C
100
Ta=100â
30
Ta=25â
10
1
3
10
30
100
COLLECTOR CURRENT IC (mA)
I ââ V
100
C
BE
COMMON EMITTER
VCE=1V
30
Ta=100â
10
β=10
500
3
1
Ta=25â
0.3
0.1
0.0
1000
300
0.2
0.4
0.6
0.8
1.0
BASE-EMMITER VOLTAGE VBE (V)
f ââ I
T
C
VCE=6V
Ta=25â
100
h ââ I
1000
FE
C
COMMON EMITTER
VCE=1V
Ta=100â
Ta=25â
100
10
1
3
10
30
100
500
COLLECTOR CURRENT IC (mA)
1.2
V
BEsat
ââ
I
C
0.8
Ta=25â
Ta=100â
0.4
0.0
1
100
30
10
3
10
30
100
COLLECTOR CURRENT IC (mA)
β=10
500
C / C ââ V / V
ob ib
CB EB
Cib
f=1MHz
IE=0/ IC=0
Ta=25â
Cob
3
1
0.1
400
0.3
1
3
REVERSE VOLTAGE V (V)
P ââ T
C
a
10
20
300
200
100
10
10
30
100
COLLECTOR CURRENT IC (mA)
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta (â)
High Diode Semiconductor
2
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