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| S9013-SOT-23 Datasheet, PDF (1/4 Pages) Jiangsu High diode Semiconductor Co., Ltd – SOT-23 Plastic-Encapsulate Transistors | |||
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S9 013
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( NP N )
Features
â High Collector Current.
â Complementary to S9012.
â Excellent hFE Linearity.
Marking:
â J3
SOT- 23
Symbol
VCBO
VCEO
VEBO
IC
PC
RÎJA
Tj
Tstg
Parameter
Value
Collector-Base Voltage
40
Collector-Emitter Voltage
25
Emitter-Base Voltage
5
Collector Current
500
Collector Power Dissipation
300
Thermal Resistance From Junction To Ambient
416
Junction Temperature
150
Storage Temperature
-55ï½+150
Unit
V
V
V
mA
mW
â/W
â
â
C
B
E
Electrical Characteristics (T=25â Unless otherwise specifiedï¼
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V(BR)CB= O IC=0.1mA, IE 0
V(B= R)CEO IC=1mA, IB 0
V(BR)EB= O IE=0.1mA, IC 0
IC= BO VCB=40V, IE 0
IC= EO VCE=20V, IB 0
= IEBO VEB=5V, IC 0
hFE(1)
VCE== 1V, IC 50mA
hFE(2)
VC= E=1V, IC 500mA
VCE(sat)
IC== 500mA, IB 50mA
VBE(sat)
IC== 500mA, IB 50mA
VBE
VCB=1V,IC= 10mA,
fT
VCE=6V,IC=20mA, f=30MHz
Cob
VCB=6V, IE=0, f=1MHz
Min
Typ
Max Unit
40
V
25
V
5
V
0.1
uA
0.1
uA
0.1
uA
120
400
40
0.6
V
1.2
V
0.7
V
150
MHz
8
pF
CLASSIFICATION OF hFE
RANK
RANGE
L
120-200
H
200-350
J
300-400
High Diode Semiconductor
1
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