S9012-TO-92 Datasheet, PDF (2/4 Pages) Jiangsu High diode Semiconductor Co., Ltd – TO-92 Plastic-Encapsulate Transistors

Typical Characteristics
-4.5
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
-0.0
-0
-1200
I ——
C
V
CE
-20uA
-18uA
-16uA
COMMON
EMITTER
T_a=25℃
-14uA
-12uA
-10uA
-8uA
-6uA
-4uA
I_B=-2uA
-2
-4
-6
-8
-10
-12
COLLECTOR-EMITTER VOLTAGE V_CE (V)
V
——
BEsat
I
C
500
100
10
-1
-500
h ——
FE
I
C
T_a=100℃
T_a=25℃
V_CE=-1V
-10
-100
-500
COLLECTOR CURRENT I_C (mA)
V
——
CEsat
I
C
-800
-400
-1
-500
-100
-10
-1
-0
50
10
1
-0.1
T
=25^℃
a
-100
T
=100
a
℃
-10
-100
COLLECTOR CURRENT I_C (mA)
I —— V
C
BE
β=10
-500
-10
-1
400
100
T
=100
a
℃
T
=25^℃
a
-10
COLLECTOR CURRENT
f
T
——
I
C
-100
I_C (mA)
β=10
-500
COMMON EMITTER
V_CE=-1V
-300
-600
-900
BASE-EMMITER VOLTAGE V_BE (mV)
-1200
C /C —— V /V
ob ib
CB EB
C_ib
C_ob
-1
REVERSE VOLTAGE V (V)
f=1MHz
I_E=0/I_C=0
T_a=25 ℃
-10
-20
10
-1
700
600
500
400
300
200
100
0
0
COMMON EMITTER
V_CE=-6V
T_a=25℃
-10
-100
COLLECTOR CURRENT I_C (mA)
P —— T
C
a
25
50
75
100
125
150
AMBIENT TEMPERATURE T_a (℃)
High Diode Semiconductor
2