S9012-TO-92 Datasheet, PDF (1/4 Pages) Jiangsu High diode Semiconductor Co., Ltd – TO-92 Plastic-Encapsulate Transistors

S9 012
TO-92 Plastic-Encapsulate Transistors
TRANSISTOR( P NP )
Features
● High Collector Current.
● Complementary to S9013.
● Excellent h_FE Linearity.
TO- 9 2
Symbol
V_CBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Value
Collector-Base Voltage
-40
Collector-Emitter Voltage
-25
Emitter-Base Voltage
-5
Collector Current
-500
Collector Power Dissipation
625
Thermal Resistance From Junction To Ambient
416
Junction Temperature
150
Storage Temperature
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
E BC
Electrical Characteristics (T=25℃ Unless otherwise specified）
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
Test conditions
V_(BR)CBO I_C= -100μA, I_E=0
V_(BR)CEO I_C= -1mA,I_B=0
V_(BR)EBO I_E=-100μA, I_C=0
I_CBO
V_CB=-40V, I_E=0
I_CEO
V_CE=-20V, I_B=0
I_EBO
V_EB= -5V, I_C=0
h_FE
V_CE=-1V,I_C=-50mA
V_CE(sat) I_C=-500mA, I_B= -50mA
V_BE(sat)
f_T
I_C=-500mA, I_B= -50mA
V_CE=-6V, I_C= -20mA
f=30MHz
Min
Typ
Max Unit
-40
V
-25
V
-5
V
-0.1
μA
-0.1
μA
-0.1
μA
64
400
-0.6
V
-1.2
V
150
MHz
CLASSIFICATION OF h_FE
Rank
D
E
Range
64-91
78-112
F
96-135
G
112-166
H
144-202
I
190-300
J
300-400
High Diode Semiconductor
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