S9012-SOT-23 Datasheet, PDF (2/4 Pages) Jiangsu High diode Semiconductor Co., Ltd – SOT-23 Plastic-Encapsulate Transistors

Typical Characteristics
-100
-80
-60
-40
-20
-0
-0
-1000
Static Characteristic
-400uA
-350uA
-300uA
-250uA
-200uA
COMMON
EMITTER
Ta=25℃
-150uA
-100uA
I_B=-50uA
-4
-8
-12
-16
-20
COLLECTOR-EMITTER VOLTAGE V_CE (V)
V
—— I
CEsat
C
-100
-10
-1
-1
500
Ta=100℃
Ta=25℃
-10
-100
COLLECTOR CURRENT I_C (mA)
f
T
——
I
C
β=10
-500
VCE=-6V
Ta=25 ^oC
400
300
200
100
0
-1
-1.2
-0.8
-0.4
-0.0
-1
100
10
h —— I
FE
C
COMMON EMITTER
VCE=-1V
Ta=100℃
Ta=25℃
-10
-100
-500
COLLECTOR CURRENT I_C (mA)
V
—— I
BEsat
C
Ta=25℃
Ta=100℃
-10
-100
COLLECTOR CURRENT I_C (mA)
C / C —— V / V
ob ib
CB EB
Cib
β=10
-500
f=1MHz
I_E=0/ I_C=0
Ta=25℃
Cob
100
-5
-10
1
-100
-0.1
COLLECTOR CURRENT I_C (mA)
Pc —— Ta
400
300
200
100
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta (℃)
-1
REVERSE VOLTAGE V (V)
-10
-20
High Diode Semiconductor
2