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| S9012-SOT-23 Datasheet, PDF (1/4 Pages) Jiangsu High diode Semiconductor Co., Ltd – SOT-23 Plastic-Encapsulate Transistors | |||
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S9 012
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( P NP )
Features
â High Collector Current.
â Complementary to S9013.
â Excellent hFE Linearity.
Marking:
â 2T1
SOT- 23
Symbol
VCBO
VCEO
VEBO
IC
PC
RÎJA
Tj
Tstg
Parameter
Value
Collector-Base Voltage
-40
Collector-Emitter Voltage
-25
Emitter-Base Voltage
-5
Collector Current
-500
Collector Power Dissipation
300
Thermal Resistance From Junction To Ambient
416
Junction Temperature
150
Storage Temperature
-55ï½+150
Unit
V
V
V
mA
mW
â/W
â
â
C
B
E
Electrical Characteristics (T=25â Unless otherwise specifiedï¼
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
Min
Typ
Max Unit
V(BR)CBO IC=-0.1mA, IE=0
-40
V
V(BR)CEO IC=-1mA, IB=0
-25
V
V(BR)EBO IE=-0.1mA, IC=0
-5
V
ICBO
VCB=-40V, IE=0
-0.1
uA
ICEO
VCE=-20V, IB=0
-0.1
uA
IEBO
VEB=-5V, IC=0
-0.1
uA
hFE
VCE=-1V, IC=-50mA
120
400
VCE(sat) IC=-500mA, IB=-50mA
-0.6
V
VBE(sat) IC=-500mA, IB=-50mA
-1.2
V
fT
VCE=-6V,IC=-20mA, f=30MHz
150
MHz
Cob
VCB=-10V, IE=0, f=1MHz
5
pF
CLASSIFICATION OF hFE
RANK
RANGE
L
120-200
H
200-350
High Diode Semiconductor
J
300-400
1
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