MUR820-28F-29 Datasheet, PDF (2/3 Pages) Jiangsu High diode Semiconductor Co., Ltd – TO-220 Plastic-Encapsulate Diodes

Typical Characteristics
FIG.1: FORWARD CURRENT DERATING CURVE
12
FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT
210
10
180
8
150
120
6
90
4
60
2
30
0
50
70
90
110
130
150
Tc(℃)
01
FIG3:Instantaneous Forward Voltage
60
40
20
MUR820(F)
10
5.0
1000
100
10
MUR840(F)
1.0
MUR860(F)
1.0
0.5
0.1
0.2
0.1 ₀
Ta=25℃
0.2 0.4 0.6 0.8 _1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VF(V)
0.01
0
8.3ms Single Half Sine Wave
JEDEC Method
10
100
Number of Cycles
FIG.4:TYPICAL REVERSE CHARACTERISTICS
Tj=125℃
Tj=100℃
Tj=25℃
20
40
60
80
100
Voltage(%)
FIG.5: Diagram of circuit and Testing wave form of reverse recovery time
I
D
trr
IF
VR
IF
RL
0
t
IRR
IR
High Diode Semiconductor
2