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MUR820-28F-29 Datasheet, PDF (1/3 Pages) Jiangsu High diode Semiconductor Co., Ltd – TO-220 Plastic-Encapsulate Diodes | |||
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MUR820(F) THRU MUR860(F)
TO-220 Plastic-Encapsulate Diodes
Super Fast Rectifier
HD TO84
Features
âIo
8A
âVRRM
200V-600V
âHigh surge current capability
TO- 220 AC
ITO- 220 AC
Applications
â Rectifier
Marking
â MUR8XX(F)
XX : From 20 To 60
12
1
2
1
2
Item
Symbol Unit
Test Conditions
20
Repetitive Peak Reverse Voltage VRRM
V
200
Average Rectified Output Current
Io
A
60HZ Half-sine wave, Resistance
load, Tc(Fig.1)
Surge(Non-repetitive)Forward
Current
Junction Temperature
Storage Temperature
IFSM
TJ
TSTG
A
60Hz Half-sine wave ,1 cycle ,
Ta =25â
â
â
MUR8-(F)
40
60
400
600
8.0
120
-55~+150
-55 ~ +150
Electrical Characteristics (Ta=25â Unless otherwise specifiedï¼
Item
Symbol
Unit
Test Condition
Peak Forward Voltage
Peak Reverse Current
Reverse Recovery Time
Thermal
Resistance(Typical) (Note1)
VF
IRRM1
IRRM2
Trr
RθJ-A
V
uA
ns
â/W
IF =8.0A
V RM=VRRM
Ta =25â
Ta =125â
IF=0.5A IRM=1A
IRR=0.25A
Typical Junction
Capacitance(Note2)
Cj
pF
NOTE1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
NOTE2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
20
0.98
High Diode Semiconductor
MUR8-(F)
40
60
1.3
1.7
10
500
50
30
150
1
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