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| MMBT3904 Datasheet, PDF (2/4 Pages) NXP Semiconductors – NPN switching transistor | |||
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Typical Characteristics
100
80
60
40
20
0
0
600
Static Characteristic
500uA
450uA
400uA
COMMON
EMITTER
Ta=25â
350uA
300uA
250uA
200uA
150uA
100uA
IB=50uA
4
8
12
16
20
COLLECTOR-EMITTER VOLTAGE V (V)
CE
V
ââ I
CEsat
C
300
Ta=100â
100
Ta=25â
30
h ââ I
400
FE
C
COMMON EMITTER
VCE=1V
300
Ta=100â
200
Ta=25â
100
0
0.1
0.3
1
3
10
30
100
COLLECTOR CURRENT IC (mA)
1.2
V
BEsat
ââ
I
C
Ta=25â
0.8
Ta=100â
0.4
10
1
3
10
30
100
COLLECTOR CURRENT IC (mA)
I ââ V
100
C
BE
COMMON EMITTER
VCE=1V
30
Ta=100â
10
β=10
200
3
1
Ta=25â
0.3
0.1
0.2
0.4
0.6
0.8
1.0
1.2
BASE-EMMITER VOLTAGE VBE (V)
300
VCE=20V
Ta=25â
f ââ I
T
C
200
β=10
0.0
1
3
10
30
100
300
COLLECTOR CURRENT IC (mA)
C / C ââ V / V
9
ob ib
CB EB
f=1MHz
IE=0/IC=0
Cib
Ta=25â
3
Cob
1
0.1
250
200
150
0.3
1
3
REVERSE VOLTAGE V (V)
P ââ T
C
a
10
20
100
50
100
1
3
10
30
60
COLLECTOR CURRENT IC (mA)
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta (â)
High Diode Semiconductor
2
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