MMBT3904 Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN switching transistor

MMBT3904
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( NP N )
Features
● Complementary to MMBT3906
SOT- 23
Marking:
● 1AM
Symbol
V_CBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
60
40
6
200
200
625
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CEX
Test conditions
I_C=10µA, I_E=0
I_C=1mA, I_B=0
I_E=10µA, I_C=0
V_CE=30V, V_EB(off)=3V
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay time
Rise time
Storage time
Fall time
CLASSIFICATION OF h_FE
HFE
RANK
RANGE
I_CBO
I_EBO
h_FE(1)
h_FE(2)
h_FE(3)
V_CE(sat)
V_BE(sat)
f_T
t_d
t_r
t_s
t_f
V_CB= 60V, I_E=0
V_EB=5V, I_C=0
V_CE=1V, I_C=10mA
V_CE=1V, I_C=50mA
V_CE=1V, I_C=100mA
I_C=50mA, I_B=5mA
I_C=50mA, I_B=5mA
V_CE=20V,I_C=10mA, f=100MHz
V_CC=3V, V_BE(off)=-0.5V I_C=10mA,
I_B1=1mA
V_CC=3V, V_BE(off)=-0.5V I_C=10mA,
I_B1=1mA
V_CC=3V, I_C=10mA, I_B1= I_B2=1mA
V_CC=3V, I_C=10mA, I_B1= I_B2=1mA
L
100–200
100-300
C
B
E
Min
Typ
Max
60
40
6
50
100
100
100
300
60
30
0.3
0.95
300
35
35
200
50
H
200–300
High Diode Semiconductor
Unit
V
V
V
nA
nA
nA
V
V
MHz
ns
ns
ns
ns
1