MMBT2907 Datasheet, PDF (2/4 Pages) Samsung semiconductor – PNP (GENERAL PURPOSE TRANSISTOR)

Typical Characteristics
-200
-150
-100
-50
-0
-0
-1000
Static Characteristic
-900uA _-810uA
-720uA
-630uA
-540uA
COMMON
EMITTER
T_a=25℃
-450uA
-360uA
-270uA
-180uA
I_B=-90uA
-5
-10
-15
-20
COLLECTOR-EMITTER VOLTAGE V_CE (V)
V
——
CEsat
I
C
400
300
200
100
0
-1
-1200
h ——
FE
T_a=100℃
I
C
COMMON EMITTER
V_CE= -10V
T_a=25℃
-10
-100
-600
COLLECTOR CURRENT I_C (mA)
V
—— I
BEsat
C
-100
-10
-1
-600
-100
T_a=100 ℃
T_a=25℃
-10
-100
COLLECTOR CURREMT I_C (mA)
I ——
C
V
BE
β=10
-600
-900
-600
-300
-1
100
T_a=25℃
T_a=100 ℃
-10
-100
COLLECTOR CURREMT I_C (mA)
C /C ——
ob ib
V /V
CB EB
C_ib
β=10
-600
f=1MHz
I_E=0/I_C=0
T_a=25 ℃
-10
-1
-0.1
-0
500
COMMON EMITTER
V_CE= -10V
-300
-600
-900
BASE-EMMITER VOLTAGE V_BE (mV)
-1200
f ——
T
I
C
10
1
-0.1
300
C_ob
-1
-10
-20
REVERSE VOLTAGE V (V)
P —— T
C
a
250
400
200
150
300
100
200
-0
V_CE=-20V
T_a=25 ^oC
-10
-20
-30
-40
-50
-60
COLLECTOR CURRENT I_C (mA)
50
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE T_a (℃)
High Diode Semiconductor
2