MMBT2907 Datasheet, PDF (1/4 Pages) Samsung semiconductor – PNP (GENERAL PURPOSE TRANSISTOR)

MMBT2907
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( P NP )
Features
● Epitaxial planar die construction
● Complementary NPN Type available(MMBT2222)
SOT- 23
Marking:
● M2B
Symbol
V_CBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-60
-40
-5
-600
250
500
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
C
B
E
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Base cut-off current
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay time
Rise time
Storage time
Fall time
*Pulse test: t_p≤300μs, δ≤0.02.
Symbol
V_(BR)CBO
V_(BR)CEO*
V_(BR)EBO
I_CBO
I_EBO
I_CEX
h_FE(1)*
h_FE(2)*
h_{FE(3) *}
V_CE(sat)*
V_CE(sat)*
V_BE(sat)*
V_BE(sat)*
f_T
t_d
t_r
t_S
t_f
Test conditions
I_C=-10μA,I_E=0
I_C=-10mA,I_B=0
I_E=-10μA,I_C=0
V_CB=-50V,I_E=0
V_CE=-3V, I_C =0
V_CE=-30 V, V_BE(off) =-0.5V
V_CE=-10V,I_C=-150mA
V_CE=-10V,I_C=-0.1mA
V_CE=-10V,I_C=-500mA
I_C=-150mA,I_B=-15mA
I_C=-500mA,I_B=-50mA
I_C=-150mA,I_B=-15mA
I_C=-500mA,I_B=-50mA
V_CE=-20V,I_C=-50mA,f=100MHz
V_CE=-30V,I_C=-150mA,_B1=-15mA
V_CE=-6V,I_C=-150mA,
I_B1=- I_B2=- 15mA
Min
-60
-40
-5
100
52
32
200
Typ Max Unit
V
V
V
-20
nA
-10
nA
-50
nA
300
-0.4
-0.67
-1
-1.2
10
25
225
60
V
V
V
V
MHz
ns
ns
ns
ns
High Diode Semiconductor
1