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| MMBT2222A Datasheet, PDF (2/4 Pages) NXP Semiconductors – NPN switching transistor | |||
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Typical Characteristics
Static Characteristic
0.25
COMMON EMITTER
Ta=25â
0.20
0.15
1mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.10
0.4mA
0.05
0.00
0
0.5
β=10
0.3mA
0.2mA
IB=0.1mA
2
4
6
8
10
12
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCEsat ââ IC
0.4
0.3
0.2
Ta=100â
0.1
Ta=25â
0.0
1
10
100
600
COLLECTOR CURRENT IC (mA)
600
COMMON EMITTER
VCE=10V
100
IC ââ VBE
Ta=100â
10
Ta=25â
1
500
400
300
200
100
0
0.1
1.2
0.8
0.4
0.0
1
100
10
hFE ââ IC
COMMON EMITTER
VCE=10V
Ta=100â
Ta=25â
1
10
100
600
COLLECTOR CURRENT IC (mA)
VBEsat ââ IC
Ta=25â
Ta=100â
10
100
COLLECTOR CURRENT IC (mA)
Cob/ Cib ââ VCB/ VEB
Cib
β=10
600
f=1MHz
IE=0/ IC=0
Ta=25â
Cob
0.1
0.0
500
0.2
0.4
0.6
0.8
1.0
BASE-EMMITER VOLTAGE VBE (V)
fT ââ IC
COMMON EMITTER
VCE=20V f=200MHz
Ta=25â
1
0.1
400
300
1
REVERSE VOLTAGE V (V)
Pc ââ Ta
10
20
200
100
100
10
80
COLLECTOR CURRENT IC (mA)
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta (â)
High Diode Semiconductor
2
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