MMBT2222A Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN switching transistor

MMBT2222A
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( NP N )
Features
● Epitaxial planar die construction
● Complementary PNP Type available(MMBT2907A)
SOT- 23
Marking:
● 1P
Symbol
V_CBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
75
40
6
600
300
417
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
C
B
E
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Symbol T est conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V_(BR)CBO
V_(BR)CEO*
I_C= 10μA, I_E=0
I_C= 10mA, I_B=0
Emitter-base breakdown voltage
V_(BR)EBO I_E=10μA, I_C=0
Collector cut-off current
I_CBO
V_CB=60V, I_E=0
Collector cut-off current
I_CEX
V_CE=30V,V_BE(off)=3V
Emitter cut-off current
I_EBO
h_FE(1) ^*
V_EB= 3V, I_C=0
V_CE=10V, I_C= 150mA
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay time
Rise time
h_FE(2)
h_FE(3) ^*
V_CE(sat) ^*
V_BE(sat) ^*
f_T
t_d
t_r
V_CE=10V, I_C= 0.1mA
V_CE=10V, I_C= 500mA
I_C=500 mA, I_B= 50mA
I_C=150 mA, I_B=15mA
I_C=500 mA, I_B= 50mA
I_C=150 mA, I_B=15mA
V_CE=20V, I_C= 20mA,
f=100MHz
V_CC=30V, V_BE(off)=-0.5V
I_C=150mA , I_B1= 15mA
Storage time
Fall time
*pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%.
CLASSIFICATION OF h_FE
t_S
V_CC=30V, I_C=150mA
t_f
I_B1=-I_B2=15mA
RANK
RANGE
L
100–200
MARKING 13
Min
Typ
75
40
6
100
40
42
300
H
200–300
Max
0.01
0.01
0.1
300
1
0.3
2.0
1.2
10
25
225
60
High Diode Semiconductor
Unit
V
V
V
μA
μA
μA
V
V
MHz
ns
ns
ns
ns
1