HD2300 Datasheet, PDF (2/6 Pages) Jiangsu High diode Semiconductor Co., Ltd – SOT-23 Plastic-Encapsu l ate MOSFET

Electrical Characteristics (T_A=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
STATIC CHARACTERISTICS
Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS
VDS =20V,VGS = 0V
Gate-body leakage current
Gate threshold voltage⁽³⁾
IGSS
VGS(th)
VGS =±12V, VDS = 0V
VDS =VGS, ID =250µA
Drain-source on-resistance⁽³⁾
RDS(on)
VGS =4.5V, ID =3A
VGS =2.5V, ID =2A
Forward tranconductance⁽³⁾
DYNAMIC CHARACTERISTICS⁽⁴⁾
VGS =1.8V, ID =2A
gFS
VDS =10V, ID =6A
Input Capacitance
Ciss
Output Capacitance
Coss
VDS =8V,VGS =0V,f=1MHz
Reverse Transfer Capacitance
Crss
SWITCHING CHARACTERISTICS⁽⁴⁾
Turn-on delay time
td(on)
Turn-on rise time
Turn-off delay time
tr
td(off)
VGS=4.5V,VDS=10V,
ID=1A,RGEN=6Ω
Turn-off fall time
tf
Total gate charge
Qg
Gate-source charge
Qgs
VDS =10V,VGS =4.5V,ID =6A
Gate-drain charge
Qgd
SOURCE-DRAIN DIODE CHARACTERISTICS
Body Diode Voltage⁽³⁾
VSD
Continuous Source-Drain Diode Current
IS
IS=1.7A, VGS = 0V
TC=25℃
Notes:
1. Repetitive rating : Pulse width limited by junction temperature.
2. Surface mounted on FR4 board , t≤10s.
3. Pulse Test : Pulse Width≤80μs, Duty Cycle≤0.5%.
4. Guaranteed by design, not subject to producting.
Min Type Max
Unit
20
V
1
µA
±100
nA
0.6 0.84
1
V
22
28
30
38
mΩ
53
60
5
S
523
99
pF
75
10.5 21
4.5
9
ns
27.5 55
4.3 8.6
6.4 8.2
1.8 2.3
nC
1.3 1.9
0.8 1.2
V
1.7
A
High Diode Semiconductor
2