HD2300 Datasheet, PDF (1/6 Pages) Jiangsu High diode Semiconductor Co., Ltd – SOT-23 Plastic-Encapsu l ate MOSFET

HD2300
SOT-23 Plastic-Encapsulate MOSFET
N -Channel MOSFET
Product Summary
V(BR)DSS
20V
RDS(on)MAX
28mΩ@4.5V
38mΩ@2.5V
60mΩ@1.8V
ID
5.1A
SOT- 23
D
Features
● _{TrenchFET Power MOSFET}
● Excellent R_DS(on) and Low Gate Charge
Applications
● Extreme fast switches
S
G
Marking:
● _S0
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current⁽¹⁾
Power Dissipation
Thermal Resistance from Junction to Ambient⁽²⁾
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
RθJA
TJ
TSTG
Value
20
±12
5.1
20
0.35
357
150
-55~ +150
Unit
V
V
A
A
W
℃/W
℃
℃
High Diode Semiconductor
1