HD10U45 Datasheet, PDF (2/3 Pages) Jiangsu High diode Semiconductor Co., Ltd – Plastic-Encapsulate Diodes TO- 27 7

Typical Characteristics
15000
10000
Forward Characteristics
1000
100
10
Reverse Characteristics
T =125℃
a
1000
1
0.1
0.01
T =25℃
a
100
0
50 100 150 200 250 300 350 400 450 500 550 600
FORWARD VOLTAGE V (mV)
F
1E-3
5
10
15
20
25
30
35
40
45
REVERSE VOLTAGE V (V)
R
5000
4500
4000
Capacitance Characteristics
Ta=25℃
f=1MHz
3500
3000
2500
2000
1500
1000
500
0
0 1 2 3 4 5 6 7 8 9 10
REVERSE VOLTAGE V (V)
R
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
Power Derating Curve
25
50
75
100
125
AMBIENT TEMPERATURE T (℃)
a
High Diode Semiconductor
2