HD10U45 Datasheet, PDF (1/3 Pages) Jiangsu High diode Semiconductor Co., Ltd – Plastic-Encapsulate Diodes TO- 27 7

HD10U45
HD TO101
TO- 27 7 Plastic-Encapsulate Diodes
Features
●Io
10A
●VRRM
45V
●High surge current capability
●_{Low Vf}
Applications
● Rectifier
Marking
● 10U45
TO- 27 7
Cathode
& Heatsink
Anode 1
Anode 2
Parameter
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Average rectified output current@ Tc=125℃
Non-Repetitive peak forward surge current
8.3ms half sine wave
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
PD
RΘJA
Tj
Tstg
Value
45
32
10
300
1.2
85
125
-55~+150
Unit
V
V
A
A
W
℃/W
℃
℃
Electrical Characteristics (T_a=25℃ Unless otherwise specified）
Parameter
Reverse voltage
Reverse current
Forward voltage
Typical total capacitance
Symbol
V(BR)
IR
VF
Ctot
Test Condition
IR=250µA
VR=45V, Ta=25℃
VR=45V, Ta=125℃
IF=5A
IF=10A
VR=4V,f=1MHz
Min Type Max Unit
45
V
100 500
µA
50
mA
0.35 0.40
V
0.39 0.45
V
3100
pF
High Diode Semiconductor
1