FABS202 Datasheet, PDF (2/4 Pages) Jiangsu High diode Semiconductor Co., Ltd – ABS Plastic-Encapsulate Bridge Rectifier

Typical Characteristics
2.4
2.0
1.6
1.2
0.8
0.4
0
0
FIG1:Io-Ta Curve
on alumina substrate
sine wave R-load
with heatsink
40
80
120
160
Ta(℃ )
70
60
50
40
30
20
10
0
1
FIG2:Surge Forward Current Capadility
sine wave
0
8.3ms 8.3ms
1cycle
non-repetitive
Tj=25℃
2
5
10 20
50
100
Number of Cycles
FIG.3: TYPICAL FORWARD CHARACTERISTICS
20
10
4.0
2.0
1.0
0.4
0.2
0.1
TJ=25
Pulse width=300us
1% Duty Cycle
0.02
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VF(V)
FIG4:Typical Reverse Characteristics
100
Tj=150℃
10
1.0
Tj=25℃
0.1
0.01
0
20
40
60
80
100
Voltage(%)
High Diode Semiconductor
2