FABS202 Datasheet, PDF (1/4 Pages) Jiangsu High diode Semiconductor Co., Ltd – ABS Plastic-Encapsulate Bridge Rectifier

FABS202 THRU FABS210
HD AB60
ABS Plastic-Encapsulate Bridge Rectifier
Features
●Io
2A
●VRRM
50V-1000V
ABS
●High surge current capability
●Glass passivated chip
●Polarity: Color band denotes cathode
Applications
● _{General purpose 1 phase Bridge}
rectifier applications
Marking
● FABS2X
X ^: From 02 To 10
Item
Symbol Unit
Repetitive Peak Reverse
Voltage
V_RRM
V
Maximum RMS Voltage
V _RMS
V
Conditions
FABS
202 204 206 208 210
200 400 600 800 1000
140 280 420 560 700
Average Rectified Output
Current
I_O
A
60Hz sine wave,
R-load,Ta=35℃
On alumina substrate
Surge(Non-
repetitive)Forward Current
I_FSM
A
60H_Z sine wave, 1 cycle, T_j=25℃
Current Squared Time
I²t
A²S 1ms≤t<8.3ms Tj=25℃，Rating of per diode
Storage Temperature
Junction Temperature
T_stg
℃
T_j
℃
2.0
50
3.7
-55 ~+150
-55 ~+150
Item
Symbol
Peak Forward Voltage
Maximum reverse recovery
time
Peak Reverse Current
Thermal
Resistance(Typical)
V_F
trr
I_RRM1
I_RRM2
R_θJ-A
R_θJ-L
Unit
V
ns
μA
℃/W
Test Condition
I_F =2.0A
FABS
202 204 206 208 210
1.3
IF=0.5A,IR=1.0A,Irr=0.25A
150
VRM=VRRM
Ta =25℃
Ta =125℃
Between junction and ambient
250
500
5
50
62.5
Between junction and terminal
25
High Diode Semiconductor
1