ES1AF-ES1JF Datasheet, PDF (2/4 Pages) Jiangsu High diode Semiconductor Co., Ltd – SMAF Plastic-Encapsulate Diodes

Typical Characteristics
FIG.1: FORWARD CURRENT DERATING CURVE
1.2
1.0
0.8
0.6
0.4
0.2
Resistive or Inductive Load
P.C.B. Mounted on 0.2"×0.2"
(5.0mm×5.0mm)Copper Pad Areas
0
80
90
100
110
120
130
140
150
TL(℃)
FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT
30
25
8.3ms Single Half Sine Wave
20
15
10
5
01
10
100
Number of Cycles
FIG.3: TYPICAL FORWARD CHARACTERISTICS
100
TJ=25℃
Pulse width=300us
1% Duty Cycle
ES1A-ES1D
10
1.0
ES1E-ES1G
1000
100
10
FIG.4：TYPICAL REVERSE CHARACTERISTICS
Tj=150℃
Tj=125℃
Tj=100℃
ES1H-ES1J
0.1
1.0
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VF(V)
0.1
0
20
40
FIG.5: Diagram of circuit and Testing wave form of reverse recovery time
I
D
trr
IF
VR
IF
RL
0
Tj=25℃
60
80
100
Voltage(%)
t
IRR
IR
High Diode Semiconductor
2