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ES1AF-ES1JF Datasheet, PDF (1/4 Pages) Jiangsu High diode Semiconductor Co., Ltd – SMAF Plastic-Encapsulate Diodes | |||
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ES1AF THRU ES1JF
SMAF Plastic-Encapsulate Diodes
Super Fast Recovery Rectifier Diode
Features
âIo
1A
âVRRM
50V-600V
âHigh surge current capability
âGlass passivated chip
âPolarity: Color band denotes cathode
Applications
â Rectifier
Marking
â ES1AF-ES1JF : ES1A-ES1J
SMAF
HD AF46
Item
ES1
Symbol Unit
Test Conditions
AF BF CF DF EF GF HF JF
J
Repetitive Peak Reverse Voltage VRRM
V
50 100 150 200 300 400 500 600
Maximum RMS Voltage
V RMS
V
35 70 105 140 210 280 350 420
Average Forward Current
Surge(Non-repetitive)Forward
Current
Junction Temperature
Storage Temperature
IF(AV)
IFSM
TJ
TSTG
A 60HZ Half-sine wave, Resistance
load, TL=120â
A
60Hz Half-sine wave ,1 cycle ,
Ta =25â
â
â
1.0
30
-55~+150
-55 ~ +150
Electrical Characteristics (T=25â Unless otherwise specifiedï¼
Item
Symbol Unit
Test Condition
ES1
AF BF CF DF EF GF HF JF
Peak Forward Voltage
VF
V
IF =1.0A
0.95
1.25
1.70
Maximum reverse recovery
time
trr
ns
IF=0.5A,IR=1.0A,Irr=0.25A
35
Peak Reverse Current
IRRM1
μA
I
VRM=VRRM
Ta =25â
Ta =100â
5
100
Thermal
Resistance(Typical)
RθJ-A
RθJ-L
â/W
Between junction and ambient
Between junction and terminal
851)
351)
Notes:
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper
pad areas
High Diode Semiconductor
1
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