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RFD3055 Datasheet, PDF (2/8 Pages) Intersil Corporation – 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs
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Specifications RFD3055, RFD3055SM, RFP3055
Electrical Specifications TC = +25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Plateau Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
tD(ON)
tR
tD(OFF)
tF
tOFF
QG(TOT)
QG(10)
QG(TH)
V(PLATEAU)
CISS
COSS
CRSS
RθJC
RθJA
ID = 0.25mA, VGS = 0V
VGS = VDS, ID = 0.25mA
VDS = 60V,
VGS = 0V
TC = +25oC
TC = +150oC
VGS = ±20V
ID = 12A, VGS = 10V
VDD = 30V, ID = 12A
RL = 2.5Ω, VGS = +10V
RGS = 10Ω
VGS = 0 to 20V
VGS = 0 to 10V
VDD = 48V,
ID = 12A,
RL = 4Ω
VGS = 0 to 2V
ID = 12A, VDS = 15V
VDS = 25V, VGS = 0V
f = 1MHz
TO-251 and TO-252 Package
TO-220 Package
LIMITS
MIN
TYP MAX UNITS
60
-
-
V
2
-
4
V
-
-
1
µA
-
-
50
µA
-
-
100
nA
-
-
0.150
W
-
-
40
ns
-
7
-
ns
-
21
-
ns
-
16
-
ns
-
10
-
ns
-
-
40
ns
-
19
23
nC
-
10
12
nC
-
0.6
0.8
nC
-
-
7.5
V
-
300
-
pF
-
100
-
pF
-
30
-
pF
-
-
2.8
oC/W
-
-
100
oC/W
-
-
80
oC/W
Source-Drain Diode Ratings and Characteristics
LIMITS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
Reverse Recovery Time
VSD
ISD = 12A
-
tRR
ISD = 12A, dISD/dt = 100A/µs
-
-
1.5
V
-
100
ns
2
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