HSD32M64F8R Datasheet, PDF (6/30 Pages) Hanbit Electronics Co.,Ltd – Synchronous DRAM Module 256Mbyte (32Mx64bit), SMM ,16Mx16, 4Banks, 8K Ref. 3.3V

HANBit
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T_A = 0 to 70°C)
TEST
PARAMETER
SYMBOL
CONDITION
-13
Operating current
(One bank active)
Precharge standby
current in power-down
mode
Precharge standby
Burst length = 1
I_CC1
t_RC ≥ t_RC(min)
960
I_O = 0mA
I_CC2P
CKE ≤ V_IL(max)
t_CC=10ns
I_CC2PS
CKE & CLK ≤ V_IL(max)
t_CC=∞
I_CC2N
CKE ≥ V_IH(min)
/CE ≥ V_IH(min), tcc=10ns
Input signals are changed one
current in non power-
time during 20ns
down mode
I_CC2NS
CKE ≥ V_IH(min)
CLK ≤ V_IL(max), tcc=∞
Input signals are stable
Active standby current in
power-down mode
I_CC3P
I_CC3PS
CKE ≤ V_IL(max), tcc=10ns
CKE&CLK ≤ V_IL(max)
tcc=∞
Active standby current in
I_CC3N
CKE≥V_IH(min),
/CE≥V_IH(min), tcc=10ns
Input signals are changed one
non power-down mode
time during 20ns
(One bank active)
CKE≥VIH(min)
I_CC3NS
CLK ≤VIL(max), tcc=∞
Input signals are stable
Operating current
I_CC4
(Burst mode)
I_O = 0 mA
Page burst
1.2
4Banks Activated
t_CCD = 2CLKs
Refresh current
I_CC5
t_RC ≥ t_RC(min)
Self refresh current
I_CC6
Notes:
CKE ≤ 0.2V
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Measured with 1PLL & 3 Drive Ics.
4. Unless otherwise noticed, input swing level is CMOS(V_IH/V_IL=V_DDQ/V_SSQ).
1.76
HSD32M64F8R
VERSION
-10L
-10
NOT
UNIT
E
880
880
mA
1
8
mA
3
8
mA
3
160
mA
3
56
40
mA
3
40
240
mA
3
160
1
1
A
1
1.68
1.68
A
2
12
mA
3
URL:www.hbe.co.kr
REV.1.0(August.2002).
-6-
HANBit Electronics Co.,Ltd