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HSD32M64F8R Datasheet, PDF (1/30 Pages) Hanbit Electronics Co.,Ltd – Synchronous DRAM Module 256Mbyte (32Mx64bit), SMM ,16Mx16, 4Banks, 8K Ref. 3.3V | |||
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HANBit
HSD32M64F8R
Synchronous DRAM Module 256Mbyte (32Mx64bit), SMM ,16Mx16,
4Banks, 8K Ref. 3.3V
Part No. HSD32M64F8R
GENERAL DESCRIPTION
The HSD32M64F8R is a 32M x 64 bit Synchronous Dynamic RAM high-density memory module. The module consists
of eight CMOS 16M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages and 2K EEPROM in 8-pin
TSSOP package on a 120-pin glass-epoxy. Three 0.1uF decoupling capacitors are mounted on the printed circuit board in
parallel for each SDRAM. The HSD32M64F8R is a SMM(Stackable Memory Module type) .Synchronous design allows
precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating
frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high
performance memory system applications All module components may be powered from a single 3.3V DC power supply
and all inputs and outputs are LVTTL-compatible.
FEATURES
⢠Part Identification
HSD32M64F8R-10L : 100MHz (CL=3)
HSD32M64F8R-10 : 100MHz (CL=2)
HSD32M64F8R-13 : 133MHz (CL=3)
⢠Burst mode operation
⢠Auto & self refresh capability (8K Cycles/64ms)
⢠LVTTL compatible inputs and outputs
⢠Single 3.3V ±0.3V power supply
⢠MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
⢠All inputs are sampled at the positive going edge of the system clock
⢠The used device is 4M x 16bit x 4Banks SDRAM
URL:www.hbe.co.kr
REV.1.0(August.2002).
-1-
HANBit Electronics Co.,Ltd
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