HMS1M32M8S Datasheet, PDF (4/10 Pages) Hanbit Electronics Co.,Ltd – High-Speed SRAM MODULE 4Mbyte(1M x 32-Bit)

HANBit
HMS1M32M8S
DC AND OPERATING CHARACTERISTICS (2)
DESCRIPTION
Power Supply
Current: Operating
Power Supply
Current: Standby
TEST CONDITIONS
Min. Cycle, 100% Duty
/CE=V_IL, V_IN=V_IH or V_IL,
I_OUT=0mA
Min. Cycle, /CE=V_IH
f=0MHZ, /CE≥V_CC-0.2V,
V_IN≥ V_CC-0.2V or V_IN≤0.2V
MAX
SYMBOL -15
-17
-20
l_CC
170
165
160
l_SB
50
50
50
l_SB1
10
10
10
UNIT
mA
mA
mA
CAPACITANCE
DESCRIPTION
TEST CONDITIONS
Input /Output Capacitance
Input Capacitance
V_I/O=0V
V_IN=0V
* NOTE : Capacitance is sampled and not 100% tested
SYMBOL
C_I/O
C_IN
MAX
8
7
UNIT
pF
pF
AC CHARACTERISTICS (0oC ≤ TA ≤ 70 ^oC ; Vcc = 5V ± 0.5V, unless otherwise specified)
TEST CONDITIONS
PARAMETER
VALUE
Input Pulse Level
0.V to 3V
Input Rise and Fall Time
3ns
Input and Output Timing Reference Levels
1.5V
Output Load
See below
Output Load
+5V
D_OUT
255Ω
480Ω
30pF*
Output Load (B)
for t_HZ, t_LZ, t_WHZ, t_OW, t_OLZ & t_OHZ
+5V
D_OUT
255Ω
480Ω
5pF*
* Including scope and jig capacitance
4
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