HMD2M32M4EAG Datasheet, PDF (4/7 Pages) Hanbit Electronics Co.,Ltd – 8Mbyte(2Mx32) EDO Mode, 1K Refresh 72Pin SIMM, 5V Design

HANBit
HMD2M32M4EAG
* NOTE: I_CC1, I_CC3, I_CC4 and I_CC6 are dependent on output loading and cycle rates. Specified values are obtained with the
output open. I_CC is specified as an average current. In I_CC1 and I_CC3, address cad be changed maximum once
while /RAS=V_IL. In I_CC4, address can be changed maximum once within one page mode cycle.
o
CAPACITANCE ( T_A=25 C, Vcc = 5V, f = 1Mz )
DESCRIPTION
Input Capacitance (A0-A10)
Input Capacitance (/W)
Input Capacitance (/RAS0)
Input Capacitance (/CAS0-/CAS3)
Input/Output Capacitance (DQ0-31)
SYMBOL
C_IN1
C _IN2
C_IN3
C_IN4
C_DQ1
MIN
-
-
-
-
-
MAX
44
48
40
29
29
UNITS
pF
pF
pF
pF
pF
AC CHARACTERISTICS
(
0
o
C
≤
T_A
≤
70oC
,
Vcc
=
5V±10%,
See
notes
1,2.)
STANDARD OPERATION
Random read or write cycle time
Access time from /RAS
Access time from /CAS
Access time from column address
/CAS to output in Low-Z
Output buffer turn-off delay
Transition time (rise and fall)
/RAS precharge time
/RAS pulse width
/RAS hold time
/CAS hold time
/CAS pulse width
/RAS to /CAS delay time
/RAS to column address delay time
/CAS to /RAS precharge time
Row address set-up time
Row address hold time
Column address set-up time
Column address hold time
Column Address to /RAS lead time
Read command set-up time
Read command hold referenced to /CAS
SYMBOL
t_RC
t_RAC
t_CAC
t_AA
t_CLZ
t_OFF
t_T
t_RP
t_RAS
t_RSH
t_CSH
t_CAS
t_RCD
t_RAD
t_CRP
t_ASR
t_RAH
t_ASC
t_CAH
t_RAL
t_RCS
t_RCH
MIN
90
3
3
2
30
50
13
40
8
20
15
5
0
10
0
8
25
0
0
-5
MAX
50
15
25
13
50
10K
10K
37
25
-6
MIN MAX
110
60
17
30
3
3
15
2
50
40
60
10K
17
50
10
10K
20
45
15
30
5
0
10
0
10
30
0
0
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
URL:www.hbe.co.kr
REV. 1.0 (August.2002)
9
HANBit Electronics Co.,Ltd.