HMD2M32M4EAG Datasheet, PDF (1/7 Pages) Hanbit Electronics Co.,Ltd – 8Mbyte(2Mx32) EDO Mode, 1K Refresh 72Pin SIMM, 5V Design

HANBit
HMD2M32M4EAG
8Mbyte(2Mx32) EDO Mode, 1K Refresh 72Pin SIMM, 5V Design
Part No. HMD2M32M4EAG
GENERAL DESCRIPTION
The HMD2M32M4EAG is a 2M x 32bit dynamic RAM high-density memory module. The module consists of four CMOS
1M x 16bit DRAMs in 42-pin SOJ packages mounted on a 72-pin, double-sided, FR-4-printed circuit board. A 0.1 or
0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM components. The module is a single
In-line Memory Module with edge connections and is intended for mounting in to 72-pin edge connector sockets. All
module components may be powered from a single 5V DC power supply and all inputs and outputs are TTL-compatible.
FEATURES
w Part Identification
HMD2M32M4EAG : 1024 Cycles/32ms Ref . Gold
w Access times : 50, 60ns
w High-density 8MByte design
w Single + 5V ±0.5V power supply
w JEDEC standard pinout
w EDO mode operation
w TTL compatible inputs and outputs
w FR4-PCB design
OPTIONS
MARKING
w Timing
50ns access
-50
60ns access
-60
70ns access
-70
w Packages
72-pin SIMM
M
PERFORMANCE RANGE
Speed
tRAC
tCAC
5
50ns
15ns
6
60ns
15ns
7
70ns
15ns
PRESENCE DETECT PINS
Pin
50ns
PD1
NC
PD2
NC
PD3
Vss
PD4
Vss
URL:www.hbe.co.kr
REV. 1.0 (August.2002)
tRC
90ns
110ns
130ns
60ns
NC
NC
NC
NC
PIN ASSIGNMENT
PIN SYMBOL PIN SYMBOL PIN SYMBOL
1
Vss
25
DQ22
49
DQ8
2
DQ0
26
DQ7
50
DQ24
3
DQ16 27
DQ23
51
DQ9
4
DQ1
28
A7
52
DQ25
5
DQ17 29
A11
53
DQ10
6
DQ2
30
Vcc
54
DQ26
7
DQ18 31
A8
55
DQ11
8
DQ3
32
A9
56
DQ27
9
DQ19 33
/RAS3
57
DQ12
10
Vcc
34 /RAS2 58
DQ28
11
NC
35
NC
59
Vcc
12
A0
36
NC
60
DQ29
13
A1
37
NC
61
DQ13
14
A2
38
NC
62
DQ30
15
A3
39
Vss
63
DQ14
16
A4
40
/CAS0
64
DQ31
17
A5
41
/CAS2
65
DQ15
18
A6
42 /CAS3 66
NC
19
A10
43 /CAS1
67
PD1
20
DQ4
44
/RAS0
68
PD2
21 DQ20 45 /RAS1 69
PD3
22
DQ5
46
NC
70
PD4
23 DQ21 47
/WE
71
NC
24
DQ6
48
NC
72
Vss
70ns
NC
NC
Vss
NC
6
HANBit Electronics Co.,Ltd.