HSD8M64D8H Datasheet, PDF (1/10 Pages) Hanbit Electronics Co.,Ltd – Synchronous DRAM Module 64Mbyte (8Mx64bit), DIMM based on 8Mx8,4Banks, 4K Ref., 3.3V

HANBit
HSD8M64D8H
Synchronous DRAM Module 64Mbyte (8Mx64bit), DIMM based on
8Mx8,4Banks, 4K Ref., 3.3V
Part No. HSD8M64D8H
GENERAL DESCRIPTION
The HSD8M64D8H is a 8M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of
eight CMOS 2M x 8 bit x 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 168-pin glass-epoxy
substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The
HSD8M64D8H is a DIMM(Dual in line Memory Module) and is intended for mounting into 168-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock
cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high
bandwidth, high performance memory system applications All module components may be powered from a single 3.3V DC
power supply and all inputs and outputs are LVTTL-compatible.
FEATURES
• Part Identification
HSD8M64D8H-10 : 100MHz (CL=2)
HSD8M64D8H-10L : 100MHz (CL=3)
HSD8M64D8H-13 : 133MHz (CL=3)
• Burst mode operation
• Auto & self refresh capability (4096 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ±0.3V power supply
• MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• The used device is 2M x 8bit x 4Banks SDRAM
URL:www.hbe.co.kr
REV.1.0(August.2002)
1
HANBit Electronics Co.,Ltd.