HSD64M72D18RP Datasheet, PDF (1/11 Pages) Hanbit Electronics Co.,Ltd – Synchronous DRAM Module 512Mbyte (64Mx72bit), DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V

HANBit
HSD64M72D18RP
Synchronous DRAM Module 512Mbyte (64Mx72bit), DIMM with PLL & Register
based on 64Mx4, 4Banks, 8K Ref., 3.3V Part No. HSD64M72D18RP
GENERAL DESCRIPTION
The HSD64M72D18RP is a 64M x 72 bit Synchronous Dynamic RAM high-density memory module. The module consists
of eighteen CMOS 64M x 4 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages and 2K EEPROM in 8-pin
TSSOP package on a 168-pin glass-epoxy 0.1uF decoupling capacitors are mounted on the printed circuit board in
parallel for each SDRAM. The HSD64M72D18RP is a DIMM (Dual in line Memory Module) and is intended for mounting
into 168-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O
transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same
device to be useful for a variety of high bandwidth, high performance memory system applications All module components
may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.
FEATURES
• Part Identification
HSD64M72D18RP-10L : 100MHz (CL=3)
HSD64M72D18RP-10 : 100MHz (CL=2)
HSD64M72D18RP-13 : 133MHz (CL=3)
• Burst mode operation
• Auto & self refresh capability (8192 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ±0.3V power supply
• MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system cloc
• serial presence detect with EEPROM
• The used device is 16M x 4bit x 4Banks SDRAM
URL:www.hbe.co.kr
REV.1.0 (August.2002)
1
HANBit Electronics Co.,Ltd.