S11963-01CR_15 Datasheet, PDF (7/10 Pages) Hamamatsu Corporation – Distance area image sensor

Distance area image sensor
S11963-01CR
Parameter
Symbol
Min.
Typ.
Max.
Time from rising edge of master clock pulse to rising
edge of output signal effective period pulse*⁷
td(oe)
0
25
50
Output signal effective period pulse rise time
(10 to 90%)*⁷
tr(oe)
-
20
40
Output signal effective period pulse fall time
(10 to 90%)*⁷
tf(oe)
-
20
40
Settling time of output signal 1, 2 (10 to 90%)*⁷ *⁸
tr(Vout), tf(Vout)
-
35
70
Time from rising edge of master clock pulse to output
signal 1, 2 (output 50%)*⁷
td(Vout)
-
40
80
Charge transfer clock pulse interval
tpi(VTX)
60
-
-
Charge transfer clock pulse (VTX1) high period
thp(VTX1)
30
-
-
Charge transfer clock pulse (VTX1) low period
tlp(VTX1)
tpi(VTX) -
-
thp(VTX2) -
-
thp(VTX3)
Charge transfer clock pulse (VTX2) high period
thp(VTX2)
30
-
-
Charge transfer clock pulse (VTX2) low period
tlp(VTX2)
tpi(VTX) -
-
thp(VTX1) -
-
thp(VTX3)
Charge transfer clock pulse (VTX3) high period
thp(VTX3)
0
-
-
Charge transfer clock pulse (VTX3) low period
tlp(VTX3)
tpi(VTX)-
-
thp(VTX1)-
-
thp(VTX2)
Charge transfer clock pulse voltage rise time
tr(VTX)
-
3
-
Charge transfer clock pulse voltage fall time
tf(VTX)
-
3
-
Charge
transfer
clock
pulse
voltage
High level
Low level
VTX1, VTX2, VTX3
-
-
3
0
-
-
Time from rising edge of line synchronous trigger
pulse to rising edge of non-readout period pulse*⁷
td(dis_read)
-
Non-readout period pulse rise time (10 to 90%)*⁷
tr(dis_read)
-
Non-readout period pulse fall time (10 to 90%)*⁷
tf(dis_read)
-
25
50
20
40
20
40
*7: CL=3 pF
*8: Output voltage=0.1 V
Input terminal capacitance (Ta=25 °C, Vdd=5 V)
Parameter
Symbol
Min.
Typ.
Max.
Charge transfer clock pulse internal load capacitance
CLTX
-
40
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
ns
ns
ns
Unit
pF
7