G12242-0707W_15 Datasheet, PDF (7/10 Pages) Hamamatsu Corporation – Near infrared area image sensor with 128 x128 pixels

InGaAs area image sensor
G12242-0707W
Parameter
Clock pulse voltage
Clock pulse rise/fall times
High
Low
Symbol
V(MCLK)
tr(MCLK)
tf(MCLK)
Min.
Vdd - 0.5
0
0
Typ.
Vdd
0
10
Max.
Unit
Vdd + 0.5
V
0.5
V
12
ns
Clock pulse width
tpw(MCLK)
10
-
-
ns
Start pulse voltage
Start pulse rise/fall times
Start pulse width*³
Start (rise) timing*⁴
Start (fall) timing*⁴
Output settling time
High
Low
V(MSP)
tr(MSP)
tf(MSP)
tpw(MSP)
t1
t2
t3
Vdd - 0.5
0
0
0.001
10
10
-
Vdd
Vdd + 0.5
V
0
0.5
V
10
12
ns
-
10
ms
-
-
ns
-
-
ns
-
50
ns
*3: Integration time max.=10 ms
*4: Setting these timings shorter than the minimum value may delay the operation by one MCLK pulse and cause malfunction.
Operation mode selection block
Operating mode
Rolling shutter mode
Global shutter mode
* Low=0 V (Vss), High=5 V (Vdd)
Mode 1
Low
High
Mode 2
Low
Low
Spectral response
1.0
(Typ. Td=25 °C)
0.8
0.6
0.4
0.2
0
0.8
1.0
1.2
1.4
1.6
1.8
Wavelength (μm)
KMIRB0079EA
Photosensitivity temperature characteristics
(Typ.)
100
Td=60 °C
90
80
Td=40 °C
70
60
Td=20 °C
50
40
30
Td=-10 °C
20
10
0
1.55
1.60
1.65
1.70
1.75
Wavelength (μm)
Note: chip temperature
KMIRB0072EB
7