G12242-0707W_15 Datasheet, PDF (3/10 Pages) Hamamatsu Corporation – Near infrared area image sensor with 128 x128 pixels

InGaAs area image sensor
G12242-0707W
Electrical and optical characteristics (Td=15 °C, Vdd=5 V, PD_bias=3 V)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Spectral response range
λ
-
0.95 to 1.7
-
μm
Peak sensitivity wavelength
λp
-
1.55
-
μm
Photosensitivity
Conversion efficiency
Saturation charge
S
CE
Qsat
λ=λp
Cf=0.08 pF
0.7
0.8
-
A/W
-
1
-
μV/e^-
-
1000
-
ke^-
Saturation output voltage
Photoresponse nonuniformity*¹
Vsat
0.6
1.1
-
V
PRNU
After subtracting dark output,
Integration time=5 ms
-
±10
±20
%
Dark output
Dark current
Dark output nonuniformity
VD
ID
DSNU
-0.2
0.3
0.5
V
-
0.5
2.5
pA
-
±0.05
±0.2
V
Temperature coefficient of dark output
Readout noise
ΔTDS
Nr
Integration time=10 ms
-
1.1
-
times/°C
-
500
1000
μV rms
Dynamic range
DR
Defective pixel*²
-
-
2200
-
-
-
-
1
%
*1: Measured at one-half of the saturation, excluding first and last pixels on each row
*2: Pixels with photoresponse nonuniformity (integration time 5 ms), readout noise, or dark current higher than the maiximum value
One or less cluster of four or more contiguous defective pixels
<Examples of four contiguous defective pixels>
Normal pixel
Defective pixel
Electrical characteristics (Ta=25 °C)
Parameter
Symbol
Min.
Supply voltage
Vdd
4.9
Supply current
I(Vdd)
-
Ground
Vss
-
Element bias
PD_bias
2.9
Element bias current
I(PD_bias)
-
Video output voltage
High
VSH
3.6
(VIDEO_S)
Low
VSL
2.8
Video output voltage (VIDEO_R)
VR
2.8
Clock frequency
f
-
Video data rate
fV
-
Thermistor resistance
Rth
8.2
KMIRC0060EB
Typ.
Max.
5
5.1
20
40
0
-
3.0
3.1
-
1
4.0
4.1
2.9
3.0
2.9
3.0
-
20
f/4
-
9
9.8
Unit
V
mA
V
V
mA
V
V
MHz
MHz
kΩ
3